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VBN165R04 VBL2157N VBE5638 VBC1307 VBE1203M

VBsemi - China Power Semiconductor Manufacturer for MOSFET and SiC Devices & Solutions

VBGQTA11505

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VBTA1220N

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VBP16R67S

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VBP16R90S

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VBJ2658

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VBGL11505

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VBGL71203

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VBGQTA11505

Product features：Product Parameters:Drain-Source Voltage (VDS): 150VGate-Source Voltage (VGS): ±20VThreshold Voltage (Vth

Product application：Application Fields and Modules:1. Industrial Power Supply Modules: The VBGQTA11505 is suitable for industrial power

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VBTA1220N

Product features：Product model: VBTA1220NBrand: VBsemiparameter:- Single N structure- VDS(V): 20- VGS(㊣V): 12- V

Product application：Application examples:1. Signal amplifier: Since VBTA1220N has higher VDS and lower ID, it is suitable for circuit de

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VBP16R67S

Product features：parameter:- Polarity: Single N- Maximum drain-source voltage (VDS): 600V- Maximum gate-source voltage

Product application：Application examples:1. Industrial power module: Suitable for industrial-grade power modules, such as industrial

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VBP16R90S

Product features：parameter:- Type: Single N-type MOSFET- Maximum drain voltage (VDS): 600V- Maximum gate-source voltage

Product application：Product introduction:This product is suitable for the following areas and modules:1. Industrial motor drive

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VBJ2658

Product features：Has the following main parameters:The working voltage VDS is -60V,The gate-source voltage VGS is ㊣20V,The t

Product application：VBJ2658 is suitable for application modules in a variety of fields, such as:1. Power management module: In the p

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VBGL11505

Product features：parameter:- Transistor type: Single N- Rated drain-source voltage (VDS): 150V- Gate-source voltage (VGS): ㊣

Product application：**Application Introduction and Examples**:1. **Electric vehicle motor controller**: Due to its high rated voltag

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VBGL71203

Product features：parameter:- Unipolar N type-VDS(V): 120-VGS(㊣V): 20-Vth(V): 3- On-resistance (m次) at VGS=10V: 2.8

Product application：This product is suitable for various fields and modules, as follows:1. Power module: Because VBGL71203 has high

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About VBsemi

Strength Brand Professional Technology

Shenzhen VBsemi Electronics Co.,Ltd

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MOSFETsField effect control manufacturer

VBsemi was founded in 2003 and has achieved today's success after 20 years of development, becoming one of the most trusted electronic component manufacturers in the industry. From planar and trench processes to multi-layer epitaxial superjunction MOSFETs, from silicon power devices to the use of wide bandgap materials (WBGs), from MOSFETs to IGBTs, VBsemi's rich products have laid a solid foundation for modern technology to enter people's daily lives.

21

Engineering technician

400

Front-line employee

60

Service team

Application field

Strength brand expertise

Portable power tool

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Charger application scheme

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Portable energy storage

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Car AC Compressor

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Charging piles

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OBC DCDC application solution

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News information

Strength brand expertise

11

2024-05

Munich International Exhibition-20231101-3

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11

2024-05

Munich International Exhibition-20231101-2

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11

2024-05

Munich International Exhibition-20231101-1

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08

2024-08

ZXMP6A13FTC-VB is a SOT23 packaged MOS tube Datasheet parameter video explanatio

SOT23; P-Channel channel, -60V; -5.2A; RDS(ON)=40mΩ@VGS=10V, VGS=20V; Vth=-2V;
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08

2024-08

ZXMP10A13FTC-VB is a SOT23 packaged MOS tube Datasheet parameter video explanati

SOT23; P—Channel, -100V; -1.5A; RDS(ON)=500mΩ@VGS=10V, VGS=20V; Vth=-2.5V;
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08

2024-08

ZXMP10A13FTA-VB is a SOT23 packaged MOS tube Datasheet parameter video explanati

SOT23; P—Channel, -100V; -1.5A; RDS(ON)=500mΩ@VGS=10V, VGS=20V; Vth=-2.5V;
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29

2025-12

MOSFET Selection for Low to Medium Power P-Channel Applications: TP0610K-T1-GE3,

MOSFET Selection for Low to Medium Power P-Channel Applications: TP0610K-T1-GE3, IRFR9014TRPBF-BE3 vs. China Alternatives VB264K and VBE2610N
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29

2025-12

MOSFET Selection for Signal Switching & High-Current Applications: TP0610K-T1-E3

MOSFET Selection for Signal Switching & High-Current Applications: TP0610K-T1-E3, SIRA62DP-T1-RE3 vs. China Alternatives VB264K, VBQA1301
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29

2025-12

MOSFET Selection for Medium-Voltage Switching: TN2404K-T1-E3, SI7454DP-T1-E3 vs.

MOSFET Selection for Medium-Voltage Switching: TN2404K-T1-E3, SI7454DP-T1-E3 vs. China Alternatives VB1204M, VBQA1102N
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09

2026-03

VBA1420: The Perfect Domestic Alternative to RSS070N05HZGTB, A More Reliable Cho

VBA1420: The Perfect Domestic Alternative to RSS070N05HZGTB, A More Reliable Choice for Low-Voltage Switching Applications
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09

2026-03

VBP1103: The Superior Domestic Alternative to IXYS IXFX200N10P, A High-Performan

VBP1103: The Superior Domestic Alternative to IXYS IXFX200N10P, A High-Performance Solution for High-Current Applications
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09

2026-03

VBQG3322: The Perfect Domestic Alternative to ROHM UT6K3TCR, A More Efficient Ch

VBQG3322: The Perfect Domestic Alternative to ROHM UT6K3TCR, A More Efficient Choice for Load Switching Applications
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