In modern power design, selecting the optimal MOSFET involves balancing voltage rating, current handling, switching efficiency, and thermal performance. This analysis benchmarks two established Nexperia MOSFETs—BUK96180-100A,118 (high-voltage) and PSMN5R0-30YL,115 (low-voltage/high-current)—against their domestic alternatives, VBL1101M and VBED1303 from VBsemi. We compare key parameters and application fit to guide your component selection.
Comparative Analysis: BUK96180-100A,118 (100V N-Channel) vs. VBL1101M
Original Model (BUK96180-100A,118) Core Analysis:
This is a 100V N-channel MOSFET in a D2PAK package, designed for medium-power switching where higher voltage capability is required. Its key features include a continuous drain current (Id) of 11A and an on-resistance (RDS(on)) of 152mΩ at 10V gate drive. This combination suits applications needing reliable operation at elevated voltages with moderate current.
Domestic Alternative (VBL1101M) Compatibility and Differences:
VBsemi’s VBL1101M is a pin-to-pin compatible alternative in TO-263 (similar to D2PAK). It matches the 100V drain-source voltage but offers significantly improved performance: a lower RDS(on) of 100mΩ at 10V and a higher continuous current rating of 20A. This results in reduced conduction losses and greater current margin.
Key Application Areas:
Original BUK96180-100A,118: Suitable for 48-100V system applications requiring robust voltage withstand, such as industrial power supplies, telecom rectifiers, or high-side switches in motor drives where current demands are within 11A.
Alternative VBL1101M: Ideal for upgrades or new designs in similar voltage domains where lower conduction loss and higher current capacity (up to 20A) are critical, enabling higher efficiency or power density.
Comparative Analysis: PSMN5R0-30YL,115 (30V N-Channel) vs. VBED1303
Original Model (PSMN5R0-30YL,115) Core Analysis:
This model is a high-performance, low-voltage N-channel MOSFET in a compact SOT-669 (LFPAK) package. It excels in high-current, low-loss scenarios with a very low RDS(on) of 5mΩ at 10V and an exceptionally high continuous drain current of 91A at 30V. Its design prioritizes minimal conduction loss and efficient heat dissipation in a small footprint.
Domestic Alternative (VBED1303) Compatibility and Differences:
VBsemi’s VBED1303 is a direct alternative in the SOT669 package. It matches the 30V voltage rating and high-current nature, offering comparable performance with an RDS(on) of 2.8mΩ at 10V (even lower than the original) and a 90A continuous current rating. This makes it a highly competitive, performance-equivalent or superior drop-in replacement.
Key Application Areas:
Original PSMN5R0-30YL,115: Perfect for high-current, low-voltage point-of-load (POL) converters, synchronous rectification in server/telecom power supplies (12V/24V rails), and motor drives requiring ultra-low RDS(on) and high current in a compact package.
Alternative VBED1303: Suited for the same demanding applications—such as high-efficiency DC-DC converters, battery protection circuits, or power tools—where its ultra-low on-resistance contributes to lower thermal dissipation and potentially higher efficiency.
Conclusion
The comparison reveals clear insights:
For 100V-class applications, the domestic alternative VBL1101M provides a compelling upgrade over BUK96180-100A,118 with significantly lower on-resistance and higher current capability, enabling more efficient and robust designs.
For 30V high-current applications, VBED1303 stands as a strong, pin-compatible alternative to PSMN5R0-30YL,115, delivering similar or better conduction performance (2.8mΩ vs. 5mΩ RDS(on)) and current handling in the same compact package.
Domestic alternatives like VBL1101M and VBED1303 not only ensure supply chain resilience but often offer enhanced parameters, giving engineers greater flexibility to optimize for performance, cost, and reliability in their power switching designs.