Model: SQD19P06-60L-GE3-VB.
Silkscreen: VBE2658.
Brand: VBsemi.
Parameters:.
- P-channel.
- Maximum withstand voltage: -60V.
- Maximum current: -22A.
- On-state resistance: 48mΩ @ 10V, 57mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage: -1.5V.
Package: TO252.
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The SQD19P06-60L-GE3-VB model is a P-channel MOSFET transistor suitable for a variety of applications. The following is a detailed parameter description and application introduction of the product:.
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**Detailed parameter description:**.
- Maximum withstand voltage: -60V, which means it can withstand a voltage of no more than 60 volts. .
- Maximum current: -22A, this MOSFET can withstand a current of up to 22 amperes. .
- On-state resistance: Under different voltages, its on-state resistance is 48 milliohms (@ 10V) and 57 milliohms (@ 4.5V). This shows that it has a relatively low resistance in the on state. .
- Threshold voltage: -1.5V, indicating that the MOSFET starts to turn on at this voltage. .
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**Application Introduction:**.
This MOSFET (SQD19P06-60L-GE3-VB) is suitable for circuit modules in multiple fields, mainly used for current control, voltage switching and power amplification. Specific applications include but are not limited to the following fields:.
1. **Power management module:** Used for switching power supplies, voltage regulator circuits and power switches, helping to achieve efficient energy management. .
2. **Motor control:** As part of a motor driver or motor control module, it is used for current control and voltage switching. .
3. **Power Inverter:** In the inverter, it can be used to convert DC to AC, suitable for solar inverters, electric vehicle chargers, etc. .
4. **Power Switch and Protection:** Used in power switching, short circuit protection and overcurrent protection circuits. .
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In summary, the SQD19P06-60L-GE3-VB is a versatile P-channel MOSFET suitable for a variety of electronic applications, mainly used for current control and power management.