Model: SQD40P10-40L-GE3-VB.
Silk screen: VBE2104N.
Brand: VBsemi.
Parameters: P channel, -100V, -40A, RDS(ON), 33mΩ@10V, 36mΩ@4.5V, 20Vgs(± V); -1.92Vth(V); TO252.
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Detailed parameter description:.
- Model: SQD40P10-40L-GE3-VB.
- Functional type: P channel power MOSFET.
- Maximum voltage: -100V.
- Maximum current: -40A.
- On resistance: 33mΩ @ 10V, 36mΩ @ 4.5V.
- Gate-source voltage: ±20V.
- Threshold voltage: -1.92V.
- Package: TO252.
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Application profile:.
This SQD40P10-40L-GE3-VB product is a P-channel power MOSFET suitable for modules in a variety of fields. It has low resistance (low RDS(ON)) and high current characteristics, which can provide good performance in high voltage and high power applications. The device provides easy installation and thermal management in the TO252 package. .
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These products are mainly used in the following field modules:.
- Power module: It can be used for power switching to provide stable power output. .
- Automotive electronics: It is suitable for power switching, motor drive and other applications in automotive electronic modules. .
- Industrial automation: It can be used for industrial automation applications such as motor control, motor drive, switching power supply. .
- Renewable energy: It is suitable for power switching and drive applications in renewable energy devices such as solar inverters and wind power generation controllers. .
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In summary, the SQD40P10-40L-GE3-VB is a high-performance, low-resistance P-channel power MOSFET suitable for modules in power supplies, automotive electronics, industrial automation, and renewable energy. .