Model: SQ9945BEY-T1-GE3.
Silk screen: VBA3638.
Brand: VBsemi.
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Detailed parameter description: .
- Type: 2 N-channel MOSFET.
- Maximum withstand voltage: 60V.
- Maximum current: 6A.
- On-resistance: 27mΩ @10V, 32mΩ @4.5V.
- Gate-source voltage: 20Vgs (±V).
- Gate threshold voltage: 1.5Vth.
- Package: SOP8.
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Application introduction: .
SQ9945BEY-T1-GE3 is a device with dual N-channel MOSFET, suitable for applications where Applications for controlling multiple N-channel MOSFETs simultaneously. Its maximum withstand voltage is 60V, its maximum current is 6A, and it has low on-resistance and high performance. .
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This device is suitable for module design in many fields, mainly including: .
1. Power management module: It can be used for DC-DC converters, voltage regulators and power switches, etc. .
2. High-efficiency inverter module: suitable for solar inverters, UPS power supplies and electric vehicle chargers, etc. .
3. Motor drive module: can be used to drive high-power motors and stepper motors, etc. .
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In short, SQ9945BEY-T1-GE3 is suitable for module design in high-power applications that require simultaneous control of multiple N-channel MOSFETs, including power management, inverter and motor drive modules.