Model: SI6913DQ-T1-GE3-VB.
Silkscreen: VBC6P3033.
Brand: VBsemi.
Parameters:.
- Channel type: P-channel.
- Rated voltage: -30V.
- Rated current: -5.2A.
- On-resistance: 33mΩ @ 10V, 40mΩ @ 4.5V.
- Gate-source voltage range: ±20V.
- Threshold voltage: 1~3V.
- Package type: TSSOP8.
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Application introduction:.
SI6913DQ-T1-GE3-VB is a P-channel power MOSFET suitable for power switching and circuit control applications in various circuit modules. Due to its low on-resistance and low threshold voltage, it is particularly suitable for applications that need to work under low voltage and high current conditions. .
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The specific application modules are as follows: .
1. Power module: SI6913DQ-T1-GE3-VB can be used as a power switch in the power module to control the power on and off and adjust the power. .
2. Power tool module: In power tools, SI6913DQ-T1-GE3-VB can be used as a motor driver to control the power output and operating status of the power tool. .
3. LED lighting module: SI6913DQ-T1-GE3-VB can be used as a switch in the LED lighting module to control the brightness and switch of the LED. .
4. Electric vehicle module: In electric vehicles, SI6913DQ-T1-GE3-VB can be used as a motor driver to control the power output and control of electric vehicles. .
5. Handheld device module: In handheld devices, SI6913DQ-T1-GE3-VB can be used as a power management module to control the battery power supply and power consumption management. .
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In short, SI6913DQ-T1-GE3-VB is suitable for various applications requiring power switching and circuit control, especially for modules under low voltage and high current conditions. .