Model: SI7478DP-T1-GE3-VB.
Silk screen: VBQA1606.
Brand: VBsemi.
Parameters:.
- Channel type: N channel.
- Rated voltage: 60V .
- Maximum continuous current: 90A.
- Static turn-on resistance (RDS(ON)): 6mΩ @ 10V.
- Gate-source voltage (Vgs): 20V (±V).
- Threshold voltage (Vth): 3.6V.
- Package type: DFN8 (5X6).
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Application introduction: .
SI7478DP-T1-GE3-VB is an N-channel power MOSFET, with high voltage and current capabilities, and low on-resistance. This makes it useful in a variety of high power and high voltage applications. The following are some possible application field modules: .
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1. **Power module**: This N-channel MOSFET is suitable for high-power power modules, such as switching power supplies, DC-DC converters and inverters device. It can be used as a switching device in these applications to effectively regulate and control voltage and current. .
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2. **Motor control module**: SI7478DP-T1-GE3-VB can be used for motor control modules, including DC motor drive, stepper motor drive and brushless DC motor drive. Its low on-resistance helps improve motor efficiency. .
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3. **Battery Management System**: In the battery management system, it can be used for battery protection, charge and discharge control to ensure the safe and efficient operation of the battery. .
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4. **High-frequency switching module**: For applications requiring high-frequency switching, such as radio frequency (RF) modules or high-frequency power supplies, this MOSFET provides low turn-on resistance, helping to reduce Small power loss. .
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5. **LED driving module**: In LED lighting systems, SI7478DP-T1-GE3-VB can be used to drive LEDs to achieve brightness control and color adjustment. .
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Due to its high voltage and current characteristics and low on-resistance, SI7478DP-T1-GE3-VB is very useful in applications that need to handle high power. In actual applications, it is important to adhere to the electrical specifications and operating conditions in the data sheet to ensure optimal performance and reliability.