Model: SI4953DY-T1-E3.
Silkscreen: VBA4338.
Brand: VBsemi.
Parameters:.
- Channel type: 2 P-channel.
- Rated voltage: -30V.
- Rated current: -7A.
- RDS(ON): 35mΩ @ 10V, 48mΩ @ 4.5V.
- Gate-source voltage range: ±20V.
- Gate-source threshold voltage: -1.5V.
- Package type: SOP8.
.
Application Introduction:.
SI4953DY-T1-E3 (silkscreen: VBA4338) is a dual P-channel power MOSFET produced by VBsemi. The following is a detailed parameter description and application introduction: .
.
Detailed parameter description: .
SI4953DY-T1-E3 is a dual P-channel power MOSFET with high voltage and high current carrying capacity. The main parameters include rated voltage of -30V, rated current of -7A, RDS(ON) of 35mΩ @ 10V, 48mΩ @ 4.5V, gate-source voltage range of ±20V, gate-source threshold voltage of -1.5V, and package type of SOP8. .
.
Application field: .
SI4953DY-T1-E3 (VBA4338) is suitable for a variety of fields and application scenarios, especially for high voltage and high current circuits that require dual P-channel power MOSFETs. The following are some typical application fields: .
.
1. Power management module: SI4953DY-T1-E3 can be used in power management modules to provide efficient power conversion and stable current output, and improve the power consumption and efficiency of the system. .
2. Automotive electronic systems: It is suitable for power management, motor drive and lighting control in automotive electronic systems, meeting the requirements of automotive electronic systems for high current and high power. .
3. Industrial control systems and communication equipment: SI4953DY-T1-E3 is suitable for power management and current control in industrial control systems and communication equipment, providing stable power consumption control and current output. .
.
In summary, SI4953DY-T1-E3 (VBA4338) is a dual P-channel power MOSFET suitable for power management modules, automotive electronic systems, industrial control systems and communication equipment. It has high voltage and high current carrying capacity, suitable for circuits requiring high power and high efficiency.