Model: SI4890BDY-T1-E3-VB.
Silkscreen: VBA1311.
Brand: VBsemi.
Parameter Description:.
- Channel type: N-channel.
- Rated voltage: 30V.
- Maximum current: 12A.
- Static drain-source resistance (RDS(ON)): 12mΩ@10V, 15mΩ@4.5V.
- Gate-source threshold voltage (Vth) range: 0.8V to 2.5V.
- Gate-source voltage (±Vgs): 20V.
- Package type: SOP8.
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Application Introduction:.
SI4890BDY-T1-E3-VB is an N-channel metal oxide semiconductor field effect transistor (MOSFET) with moderate current carrying capacity, low drain-source resistance, and variable gate-source threshold voltage range. These features make it widely used in modules in various electronic fields. .
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Application fields: .
1. Power module: SI4890BDY-T1-E3-VB can be used in low to medium power power switch modules to provide power conversion and voltage regulation functions. Suitable for various consumer electronics, communication equipment and industrial equipment. .
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2. Battery protection: It can also be used in battery protection circuits to ensure the safety and effectiveness of batteries during charging and discharging. Suitable for portable electronic devices, power tools and drones. .
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3. Signal amplification: In the signal amplification module, SI4890BDY-T1-E3-VB can be used for signal amplification and switching functions, suitable for applications such as audio amplifiers, communication interfaces and sensor interfaces. .
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4. LED driver: It can also be used in LED lighting driver circuits to provide LED brightness control and energy management. Suitable for various lighting systems, LED displays and automotive lighting. .
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In short, SI4890BDY-T1-E3-VB is a versatile N-channel MOSFET suitable for electronic modules in multiple fields, providing power management, signal control and current amplification functions.