Model: SI4920DY-T1-E3.
Silk screen: VBA3316.
Brand: VBsemi.
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Detailed parameter description: .
- Type: 2 N-channel MOSFET.
- Maximum withstand voltage: 30V.
- Maximum current: 8.5A.
- On-resistance: 20mΩ @10V, 12mΩ @4.5V.
- Gate-source voltage: 20Vgs (±V).
- Gate threshold voltage: 1.5Vth.
- Package: SOP8.
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Application introduction: .
SI4920DY-T1-E3 is a device with two N-channel MOSFETs, suitable for For applications that require simultaneous control of multiple N-channel MOSFETs. Its maximum withstand voltage is 30V, its maximum current is 8.5A, and it has low on-resistance and high performance. .
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This device is suitable for module design in many fields, mainly including: .
1. Power management module: suitable for power switches and inverters that need to control multiple N-channel MOSFETs at the same time wait. .
2. Power tools: Can be used for load switches and power control in power tools. .
3. Automotive electronic module: suitable for load switch and power control in automotive electronic systems. .
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In short, SI4920DY-T1-E3 is suitable for module design in application areas that require simultaneous control of multiple N-channel MOSFETs, including power management, power tools, and automotive electronic modules.