**VBsemi SI4856ADY-T1-E3-VB**. . **Detailed parameter description:**. - Type: N-Channel MOSFET. - Rated voltage (VDS): 30V. - Maximum current (ID): 18A. - On-resistance (RDS(ON)): 5mΩ @ VGS=10V, VGS=20V. - Threshold Voltage (Vth): 1.72V. - Package: SOP8. . **Application Introduction:**. This device is suitable for medium power and medium current applications, especially in the following fields Functions in modules: . . 1. **Power module:**. - used in medium power power modules to provide efficient energy conversion. . . 2. **Motor drive:**. - In the motor control module, used for medium power motor drive. . . 3. **Power Inverter:**. - Suitable for medium-sized inverters, such as power tool drives. . . **Application fields:**. - Industrial electronics. - Power tools. - Power management module. . **Function:* *. - Provide medium power current carrying capacity. - Reduce power loss. - Achieve efficient energy conversion in medium power systems. . **Usage Precautions:** . 1. Please operate according to the recommended operating conditions in the data sheet. . 2. Pay attention to the specific value of the threshold voltage and ensure that this parameter is considered in the design. . 3. Make sure the thermal design is adequate to prevent overheating. . 4. Consider current and voltage limits in design to avoid device damage.
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