Product model: SI2366DS-T1-GE3-VB.
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Screen printing: VB1330.
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Brand: VBsemi.
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**Detailed parameter description:**.
- Package type: SOT23.
- Channel type: N-Channel.
- Rated voltage: 30V.
- Maximum current: 6.5A.
- RDS(ON) (on Resistor): 30mΩ @ VGS=10V, VGS=20V.
- Threshold voltage: 1.2~2.2V.
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**Application Introduction:**.
SI2366DS-T1-GE3-VB It is an N-Channel channel MOSFET in SOT23 package. It is widely used in the electronics field and is suitable for applications requiring high-performance switching power supplies. .
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**Main application field modules:**.
1. **Power module:** In the power module, SI2366DS-T1-GE3-VB can be used as a power switch to achieve high efficiency of electrical energy conversion. .
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2. **Power Inverter Module:** This device can be used in power inverter module to realize the conversion of electric energy from DC to AC. .
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3. **Battery management module:** In the battery management module, it can be used to control battery charge and discharge to improve the service life of the battery. .
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**Function:**.
- Realize power conversion.
- Provide reliable power management.
- Control current.
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**Use Notes:**.
1. Please ensure to operate within the specified voltage range, not exceeding 30V. .
2. Avoid overloading during use to prevent damage to the device. .
3. Follow the electrical characteristics and packaging specifications provided by the manufacturer. .
4. Correct the connection polarity to ensure it is consistent with the circuit requirements. .
5. In high current and high temperature environments, heat dissipation measures need to be taken to ensure the normal operation of the device. .
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The above is only a brief description of the product. For specific use and application, please refer to the data manual and specifications provided by the manufacturer.