Model: SI2369DS-T1-GE3. Silkscreen: VB2355. Brand: VBsemi. . Detailed parameter description:. - Type: P-channel MOSFET. - Maximum withstand voltage: -30V. - Maximum current: -5.6A. - On-resistance: 47mΩ@10V, 56mΩ@4.5V. - Gate-source voltage: 20Vgs (±V). - Gate threshold voltage: -1Vth. - Package: SOT23. . Application introduction:. SI2369DS-T1-GE3 is a P-channel MOSFET suitable for negative voltage control and load switch applications. Its maximum withstand voltage is -30V, maximum current is -5.6A, with low on-resistance and high performance. . . This device is suitable for module design in multiple fields, mainly including: . 1. Power management module: Suitable for power management module responsible for power switch and load switch control. . 2. Power tools: Can be used for negative power control and load switch in power tools. . 3. Household appliance module: Suitable for negative power control and load switch in the field of household appliances. . . In short, SI2369DS-T1-GE3 is suitable for module design in application fields such as negative voltage control and load switch, mainly used in power management, power tools and household appliance modules.
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