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SI2365EDS-T1-GE3-VB, a P-channel SOT23-3 MOSFET datasheet parameters video expla
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Model: SI2365EDS-T1-GE3-VB.
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Silk screen: VB2290.
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Brand: VBsemi.
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Parameters:.
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- Package: SOT23.
- Channel type: P—Channel.
- Rated voltage: -20V.
- Maximum current: -4A.
- On-state resistance: RDS(ON)=57mΩ@VGS=4.5V,VGS=12V.
- Threshold voltage: Vth=-0.81V.
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Application introduction:.
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SI2365EDS-T1-GE3-VB is a P-Channel power field effect transistor in SOT23 package. Its main application areas include but are not limited to: .
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1. **Power switch module:** Applicable to power switch circuits, providing high current, low on-resistance power switch functions, widely used in power management systems and various portable devices. .
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2. **Power inverter:** In low-power inverters and other fields, it can be used to achieve DC to AC conversion and provide power output for small electronic devices. .
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3. **Power regulation module:** Applicable to circuits that require low power and simple voltage regulation, such as small power regulators. .
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4. **Signal switch:** In the switch control of low-frequency signals, it is commonly used in audio equipment, communication equipment, etc. .
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5. **Current control module:** In low-power current regulation circuits, such as small current sources, current controllers, etc. .
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The characteristics of SI2365EDS-T1-GE3-VB make it perform excellently in the above low-power applications. It is a small and reliable power field effect tube.

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