Model: SI2356DS-T1-GE3-VB.
Silk screen: VB1330.
Brand: VBsemi.
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Detailed parameter description:.
- Channel type: N-channel.
- Rated voltage: 30V.
- Maximum current: 6.5A.
- Static on-resistance (RDS(ON)): 30mΩ @ 10V, 33mΩ @ 4.5V.
- Gate-source voltage (Vgs): ±20V.
- Threshold voltage (Vth): 1.2~2.2V.
- Package type: SOT23.
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Application introduction:.
SI2356DS-T1-GE3-VB is an N-channel field effect transistor suitable for modules and circuits in a variety of electronic fields. Here are some of the main application areas of this product: .
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1. **Power Switch**: This transistor can be used in power switching circuits to help achieve efficient power control and management, especially for portable devices and power management modules. .
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2. **Motor Control**: Due to its high current handling capability and low on-resistance, it is suitable for motor drive modules to control the speed and direction of the motor, such as power tools, electric vehicle motor control and fan drives. .
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3. **Inverter**: In inverter modules, SI2356DS-T1-GE3-VB can be used as a switching device to help convert DC power to AC power for applications such as solar inverters, power inverters, etc. .
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4. **Battery Protection**: It can also be used in battery protection modules to ensure that the battery remains safe and stable during charging and discharging, such as portable electronic devices and battery management systems. .
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5. **LED driver**: In LED lighting control modules, this transistor can be used as a current regulator and switch to control the brightness and color temperature of LED lamps. .
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In short, SI2356DS-T1-GE3-VB is suitable for a variety of electronic modules and circuits, including power switches, motor control, inverters, battery protection and LED drivers. Its N-channel characteristics, high current carrying capacity and low on-resistance make it a widely used component. .