Model: SI2351DS-T1-GE3-VB.
Silk screen: VB2290.
Brand: VBsemi.
Parameters: .
- Package type: SOT23.
- Channel type: P—Channel .
- Maximum drain voltage (Vds): -20V.
- Maximum drain current (Id): -4A.
- Static drain-source resistance (RDS(ON)): 57mΩ @ VGS=4.5V, VGS=12V.
- Threshold voltage (Vth): -0.81V.
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Package: SOT23.
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Application introduction: .
SI2351DS- T1-GE3-VB is a P-Channel MOSFET suitable for a variety of circuit and module designs, especially in low power and high performance applications requiring P-Channel MOSFET. .
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Field module application: .
1. **Power management module:** Due to its P-Channel MOSFET characteristics, SI2351DS-T1-GE3-VB is often used in power management modules, such as switching power supplies. , battery management system, etc. to achieve efficient power conversion and energy management. .
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2. **Current control module:** Suitable for modules that require precise control of current, such as current sources, current amplifiers, etc. .
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3. **Battery protection module:** Used for battery charge and discharge management circuit to provide efficient battery management and protection functions. .
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4. **Signal switch:** It can be used to design signal switch circuits in electronic equipment to achieve efficient switching and transmission of signals. .
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5. **Low-power devices:** Due to its low threshold voltage and low leakage current characteristics, it is suitable for devices with higher power consumption requirements, such as portable electronic devices, sensor nodes, etc. .
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Please note that the above are some typical application scenarios. Actual use requires selection and design based on specific circuit and system requirements. When integrating the SI2351DS-T1-GE3-VB, it is recommended to read its data sheet carefully for detailed electrical characteristics and operating information.