Model: SI2347DS-T1-GE3-VB.
Silk screen: VB2355.
Brand: VBsemi.
Parameters: .
- Type: P channel.
- Maximum withstand voltage: -30V .
- Maximum current: -5.6A.
- Static turn-on resistance (RDS(ON)): 47mΩ @ 10V, 56mΩ @ 4.5V.
- Gate-source voltage (Vgs): 20V (± V).
- Threshold voltage (Vth): -1V.
- Package type: SOT23.
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Application introduction: .
SI2347DS-T1-GE3-VB is a P Channel MOSFET is suitable for a variety of electronic applications. Here are some possible application areas: .
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1. Power module: This MOSFET can be used as a power switch in a power module to help improve the efficiency of power management. , suitable for portable devices, embedded systems and power inverters. .
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2. DC-DC converter: SI2347DS-T1-GE3-VB can be used in DC-DC converter to convert one voltage into another voltage, suitable for battery-driven equipment, electronics Terminals and communications equipment. .
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3. Battery management: It can also be used in the battery management system to control the charging and discharging of the battery to ensure the safety and performance of the battery. .
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4. Automotive electronics: Due to its low on-resistance and voltage characteristics, this MOSFET is also suitable for automotive electronic systems, such as vehicle power management and drive control. .
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5. Low-power electronics: Due to its low on-resistance and low-voltage characteristics, it is suitable for electronic devices that require low-power operation, such as sensor nodes, portable medical equipment, and wireless communication modules. .
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The characteristics of SI2347DS-T1-GE3-VB make it suitable for a variety of low to medium power electronic applications, especially where a P-channel MOSFET is required. However, when selecting and using this device, a detailed understanding of its data sheet and performance parameters is still required to ensure that it meets the requirements of a specific application. .