Model: Si2343CDS-T1-GE3-VB.
Silk screen: VB2355.
Brand: VBsemi.
Parameter description:.
- Polarity: P channel.
- Rated voltage: - 30V.
- Maximum continuous drain current: -5.6A.
- Static drain-source resistance (RDS(ON)): 47mΩ @ 10V, 56mΩ @ 4.5V.
- Gate - Source voltage (Vgs): 20V (±V).
- Turn-on voltage (gate threshold voltage): -1V.
- Package: SOT23.
.
Application introduction:.
Si2343CDS-T1-GE3-VB is a P-channel field-effect transistor (MOSFET) device with moderate current handling capability and low drain-source resistance suitable for low-voltage applications. This makes it very useful in a variety of electronic applications. .
.
Application fields: .
1. **Power module**: Si2343CDS-T1-GE3-VB is suitable for low-voltage power management modules, such as battery charge and discharge management, low-voltage DC-DC converters and power switches. .
.
2. **Signal Switch**: This MOSFET device can be used in low-voltage signal switching applications, such as low-voltage signal switching and circuit protection. .
.
3. **Portable Devices**: Si2343CDS-T1-GE3-VB can be used for power management, signal switching and battery management of portable devices, such as smartphones, tablets and portable electronic devices. .
.
4. **Low voltage power supply**: In low voltage applications, this MOSFET is suitable for low voltage power management, DC-DC converters and low voltage circuits. .
.
In short, Si2343CDS-T1-GE3-VB is a versatile electronic device suitable for various electronic applications that require low voltage, moderate current capability, low resistance and reliability. It can be used in power management, signal switches, portable devices, low-voltage power supplies and other modules.