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SI2308DS-T1-GE3-VB, a N-channel SOT23-3 MOSFET datasheet parameters video explan
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Name: SI2308DS-T1-GE3 .
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Model: VB1695 .
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Brand: VBsemi .
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Parameters: .
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- Channel Type :N channel.
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- Rated voltage: 60V.
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- Rated current: 4A.
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- RDS(ON): 85mΩ @ 10V, 96mΩ @ 4.5V.
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- Gate-source threshold voltage range: 1V~3V.
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- Gate-source voltage range: ±20V.
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- Package type: SOT23.
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Application introduction: .
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SI2308DS-T1-GE3 is an N-channel power MOSFET produced by VBsemi Company. The following is a detailed parameter description and application introduction: .
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Detailed parameter description: .
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SI2308DS-T1-GE3 is a high voltage, high current carrying capacity of N-channel power MOSFETs. Its main parameters include rated voltage of 60V, rated current of 4A, RDS(ON) of 85mΩ @ 10V, 96mΩ @ 4.5V, gate-source threshold voltage range of 1V~3V, gate-source voltage range of ±20V, and package type: SOT23. .
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Application fields: .
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SI2308DS-T1-GE3 is suitable for a variety of fields and application scenarios, mainly used for N-channel power MOSFETs. circuit. The following are some typical application areas: .
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1. Power management module: SI2308DS-T1-GE3 can be used in the power management module to provide efficient power conversion and stability current output, especially suitable for high-power power supplies. .
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2. Power tools and household appliances: It can be applied to motor drive circuits in power tools and household appliances to provide efficient and reliable power output. .
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3. Automotive electronic systems: SI2308DS-T1-GE3 can be used in power management, motor drive and lighting control in automotive electronic systems to meet the high voltage and high power requirements of automotive electronic systems. .
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4. LED lighting: In LED lighting systems, SI2308DS-T1-GE3 can be used as a switching element in the drive circuit to achieve efficient power conversion and precise control of LED lights. .
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5. Industrial control systems and communication equipment: SI2308DS-T1-GE3 is suitable for switching circuits in industrial control systems and communication equipment to achieve efficient power management and current control. .
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In summary, SI2308DS-T1-GE3 is an N-channel power MOSFET, suitable for power management modules, power tools, household appliances, and automotive electronic systems. , LED lighting, industrial control systems and communication equipment and other fields of modules. It has high voltage and high current carrying capacity and is suitable for circuits that need to work under high power conditions. .

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