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SI2308BDS-T1-GE3-VB, a N-channel SOT23-3 MOSFET datasheet parameters video expla
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Model: SI2308BDS-T1-GE3-VB .
Silk screen: VB1695 .
Brand: VBsemi .
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**Parameters:** .
- Package: SOT23 .
- Channel type: N—Channel .
- Maximum voltage: 60V .
- Maximum current: 4A .
- Turn-on resistance (RDS(ON)): 85mΩ @ VGS=10V, 85mΩ @ VGS=20V .
- Threshold voltage (Vth): 1~3V .
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**Application introduction:** .
SI2308BDS-T1-GE3-VB is an N-Channel in SOT23 package MOSFET has characteristics suitable for a variety of application scenarios. The following are some modules in the fields it may be used in: .
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1. **Power module:** Suitable for building power switch modules to provide efficient and reliable power output. .
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2. **Battery Management:** In charging and discharging control, it can be used in the battery management circuit to achieve effective control of the battery. .
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3. **LED driver:** Due to its high maximum current capability, it may be used in LED driver circuits to adjust the brightness of LEDs. .
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4. **Motor control:** In the motor drive circuit, it can be used in the motor control module to provide reliable drive of the motor. .
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5. **Power switches and inverters:** Suitable for constructing various power switches and inverters for efficient conversion of electrical energy. .
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Please note that when using this device, be sure to refer to its data sheet for detailed electrical performance and operating conditions. Different application areas may require specific designs and circuit configurations.

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