SI2309CDS-T1-GE3-VB, a P-channel SOT23-3 MOSFET datasheet parameters video expla

SI2309CDS-T1-GE3 (VB2658) parameter description: P channel, -60V, -5.2A, on-resistance 40mΩ@10V, 48mΩ@4.5V, 20Vgs (±V), threshold voltage -2V, package: SOT23. .
Application introduction: SI2309CDS-T1-GE3 is suitable for low power switching and current control fields. .
Its low on-resistance and small package make it perform well in compact scenarios. .
Applicable fields and modules: Suitable for modules in the fields of low-power switches, current control and analog switches, especially suitable for compact application scenarios. .