SI2305CDS-T1-GE3-VB, a P-channel SOT23-3 MOSFET datasheet parameters video expla

SI2305CDS-T1-GE3 (VB2290) parameter description: P channel, -20V, -4A, on-resistance 57mΩ@4.5V, 83mΩ@2.5V, 12Vgs(±V), threshold voltage -0.81V, package: SOT23. .
Application introduction: SI2305CDS-T1-GE3 is suitable for low-power switching and current control. .
Its low on-resistance and small package enable it to perform well in compact scenarios. .
Applicable fields and modules: Applicable to modules in the fields of low-power switching, current control and analog switching, especially suitable for compact application scenarios. .