SI2305ADS-T1-GE3 (VB2290) parameter description: P channel, -20V, -4A, on-resistance 57mΩ@4.5V, 83mΩ@2.5V, gate-source voltage range 12V (±V), threshold voltage -0.81V, Package: SOT23. . Application Introduction: SI2305ADS-T1-GE3 is a medium power P-channel MOSFET suitable for applications such as power switches, inverters and power management. . It is capable of handling moderate power requirements. . Advantages and applicable fields: It has moderate power carrying capacity and is suitable for medium power application scenarios, such as power switches, inverters, motor drives and other modules. .
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