Model: SI2305DS-T1-GE3-VB.
Silk screen: VB2290.
Brand: VBsemi.
Parameters:.
- Package type: SOT23.
- Channel type: P—Channel.
- Maximum drain voltage (Vds): -20V.
- Maximum drain current (Id): -4A.
- Static drain-source resistance (RDS(ON)): 57mΩ @ VGS=4.5V, VGS=12V.
- Threshold voltage (Vth): -0.81V.
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Package: SOT23.
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Application Introduction:.
SI2305DS-T1-GE3-VB is a P-Channel trench MOSFET suitable for various circuit and module designs, especially in low power and high performance applications that require P-Channel MOSFET. .
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Field Module Application: .
1. **Power Management Module:** Due to its P-Channel MOSFET characteristics, SI2305DS-T1-GE3-VB is often used in power management modules, such as switching power supplies, battery management systems, etc., to achieve efficient power conversion and energy management. .
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2. **Current Control Module:** Suitable for modules that require precise current control, such as current sources, current amplifiers, etc. .
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3. **Low Power Device:** Due to its low threshold voltage and low leakage current characteristics, it is suitable for devices with high power consumption requirements, such as portable electronic devices, sensor nodes, etc. .
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4. **Signal Switch:** Used to design switching circuits to achieve efficient switching and transmission of signals. .
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Please note that the above are some typical application scenarios. In actual use, selection and design should be made according to specific circuit and system requirements. When integrating the SI2305DS-T1-GE3-VB, it is recommended to read its data sheet carefully to obtain detailed electrical characteristics and operating information.