Model: NTZD3154NT1G-VB.
Silk screen: VBTA3230NS.
Brand: VBsemi.
Parameters: 2 N channels, 20V, 0.2A, RDS(ON), 300mΩ@4.5V, 350mΩ@2.5V ,20Vgs(±V); 0.3Vth(V); SC75-6.
Package: SC75-6.
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Detailed parameter description: .
- Model: NTZD3154NT1G-VB.
- Silk screen: VBTA3230NS.
- Brand: VBsemi.
- Channel type: 2 N channels.
- Maximum withstand voltage: 20V.
- Maximum current: 0.2A.
- Static on-resistance: 300mΩ @ 4.5V, 350mΩ @ 2.5V.
- Gate-source voltage: 20Vgs (±V).
- Threshold voltage: 0.3V.
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Application Introduction: .
NTZD3154NT1G-VB is a dual N-channel MOSFET suitable for a variety of low-power electronic modules and applications, especially where low current switching and low on-resistance are required. .
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Application fields: .
This product is usually used in modules in the following fields: .
1. Power switch module: used for low-power power management and current control, such as portable equipment . .
2. Signal switch module: used for analog and digital signal switching and switching, such as audio signal switcher and data selector. .
3. Sensor interface module: used to connect and manage sensor signals, such as temperature sensors and light sensors. .
4. Low-power application module: suitable for electronic devices that require extremely low static power consumption, such as sensor nodes and portable medical equipment. .
5. Battery management module: In low-power devices, it can be used for battery charging and discharge control. .
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The device's low current switching characteristics and low on-resistance make it suitable for a variety of low-power applications, helping to improve the performance and energy efficiency of electronic systems.