Model: NTZD3155CT2G-VB.
Silk screen: VBTA5220N.
Brand: VBsemi.
Parameter description: .
- Channel type: N+P channel.
- Rated voltage: ±20V .
- Maximum current: 0.6A (forward)/-0.3A (reverse).
- Static drain-source resistance (RDS(ON)): 270mΩ/660mΩ@4.5V, 410mΩ/ 840mΩ@2.5V.
- Gate-source voltage (±Vgs): ±12V.
- Gate-source threshold voltage (±Vth) range: ±0.7V to ±2V.
- Package type: SC75-6.
.
Application Introduction: .
NTZD3155CT2G-VB is an N+P channel bipolar field effect transistor (MOSFET) with forward and reverse current withstanding capability and low Drain-source resistance, and features that can accommodate different gate-source voltages. These characteristics make it widely used in modules in various electronic fields. .
.
Application fields: .
1. Power module: NTZD3155CT2G-VB can be used in power switch module to provide power switching function and voltage regulation, suitable for various electronic equipment and power systems. .
.
2. Current control: In the current control module, it can be used for current switching and control, suitable for motor control, power management and current protection. .
.
3. Amplification and signal switching: In the amplification and signal switching module, NTZD3155CT2G-VB can be used for signal amplification and switching functions, suitable for applications such as audio amplifiers, communication interfaces, and sensor interfaces. .
.
4. Inverter: It can also be used in inverter circuits to convert DC power to AC power, suitable for solar inverters, electric vehicle inverters and UPS systems. .
.
In short, NTZD3155CT2G-VB is a multi-functional bipolar MOSFET, suitable for electronic modules in many fields, providing power management, current control, signal amplification and inverter functions.