Model: NTS4409NT1G-VB.
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Silk screen: VBK1270.
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Brand: VBsemi.
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Parameters: .
- Package type: SC70-3.
- Channel type: N-Channel.
- Rated voltage: 20V.
- Maximum current: 4A.
- On-state resistance: RDS(ON) = 45mΩ @ VGS=10V, VGS= 12V.
- Threshold voltage: Vth = 1~3V.
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Package: SC70-3.
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**Detailed parameter description:**.
1. * *Package Type:** SC70-3, indicating that the device uses SC70-3 package and has three pins. .
2. **Channel Type:** N-Channel, indicating that this is an N-channel MOSFET. .
3. **Rated Voltage:** 20V, indicating the maximum voltage at which the device can operate normally. .
4. **Maximum Current:** 4A, indicating the maximum current that the device can withstand. .
5. **On-State Resistance:** RDS(ON) = 45mΩ @ VGS=10V, VGS=12V, indicating the resistance in the open state under a specific gate-source voltage. .
6. **Threshold Voltage:** Vth = 1~3V, indicating the voltage range required for the device to switch from the off state to the on state under the action of the gate-source voltage. .
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**Application Introduction:**.
NTS4409NT1G-VB is an N-Channel MOSFET suitable for a variety of applications, including but not limited to: .
1. ** Power Switches:** Can be used in power switches and power inverters due to its N-channel nature and higher current rating. .
2. **Battery Protection:** Suitable for battery management systems to protect batteries from over-discharge and over-charge. .
3. **Low Power Consumption Devices:** Due to its low rated voltage and low threshold voltage, it is suitable for electronic devices that require low power consumption. .
4. **Signal switch:** Used to switch signal lines, such as in communication systems. .
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Please note that the data sheet and application manual of the device should be carefully referenced in specific designs to ensure correct use and performance.