Model: NTS4101PT1G.
Silk screen: VBK2298.
Brand: VBsemi.
Parameters: .
- Channel type: P channel.
- Rated voltage: -20V.
- Rated Current: -3A.
- RDS(ON): 98mΩ @ 4.5V, 117.6mΩ @ 2.5V.
- Gate-source voltage range: 12V.
- Gate-source threshold voltage range: -0.6V~ -2V.
- Package type: SC70-3.
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Application introduction: .
NTS4101PT1G (silk screen: VBK2298) is a P-channel power MOSFET produced by VBsemi Company. The following is a detailed parameter description and application introduction: .
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Detailed parameter description: .
NTS4101PT1G is a P-channel power MOSFET. The main parameters include rated voltage of -20V, rated current of -3A, RDS(ON) of 98mΩ @ 4.5V, 117.6mΩ @ 2.5V, gate-source voltage range of 12V, gate-source threshold voltage range of -0.6V~-2V , the package type is SC70-3. .
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Application fields: .
NTS4101PT1G (VBK2298) is suitable for a variety of fields and application scenarios, mainly used in circuits requiring P-channel power MOSFET. The following are some typical application areas: .
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1. Power management module: NTS4101PT1G can be used in power management modules to provide efficient power conversion and stable current output, improving the power consumption and efficiency of the system. .
2. Battery management system: It is suitable for charge and discharge control circuits in battery management systems, providing high-efficiency and reliable battery management. .
3. Low-power applications: NTS4101PT1G is also suitable for power switching and signal control in low-power applications. .
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In summary, NTS4101PT1G (VBK2298) is a P-channel power MOSFET, suitable for modules in power management modules, battery management systems and low-power applications. It has the characteristics of low on-resistance and high withstand voltage, and is suitable for circuits requiring high power and high efficiency.