Model: NTD5865NLT4G-VB.
Silk screen: VBE1615.
Brand: VBsemi.
Parameters: .
- Type: N channel.
- Maximum withstand voltage: 60V.
- Maximum current: 60A.
- Static turn-on resistance (RDS(ON)): 9mΩ @ 10V, 11mΩ @ 4.5V.
- Gate-source voltage (Vgs): 20V (±V).
- Threshold voltage (Vth): 1.87V.
- Package type: TO252.
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Application introduction: .
NTD5865NLT4G-VB is a high-power N-channel MOSFET, suitable for applications requiring high voltage and electronic applications with high current carrying capacity, the following are some possible application areas: .
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1. Power module: This MOSFET can be used for power switches in power modules and can be used in industrial power supplies and power tools and electric vehicle chargers to improve power efficiency. .
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2. Motor drive: NTD5865NLT4G-VB can be used in high-power motor drive circuits, such as industrial motor control, electric vehicle motor drivers, etc., to achieve efficient motor operation. .
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3. High-power inverter: In applications requiring high-power inverter, such as welding equipment and high-power electric furnaces, this MOSFET can be used as a key switching element. .
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4. Battery management: It can also be used in the battery management system to control the charging and discharging of the battery to ensure the safety and performance of the battery. .
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5. Automotive electronics: Due to its high voltage and current characteristics, this MOSFET is also suitable for automotive electronic systems, such as vehicle power management and drive control. .
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The high voltage and current capabilities of the NTD5865NLT4G-VB, as well as its low on-resistance, make it ideal for a variety of high-performance, high-power electronic applications. However, when selecting and using this device, a detailed understanding of its data sheet and performance parameters is still required to ensure that it meets the requirements of a specific application. .