Model: NTD5865NLT4G&15-VB.
Silkscreen: VBE1615.
Brand: VBsemi.
Parameters:.
- Channel type: N—Channel.
- Rated voltage: 60V.
- Rated current: 60A.
- On-resistance (RDS(ON)): 9mΩ @ VGS=10V, VGS=20V.
- Threshold voltage (Vth): 1.87V.
- Package: TO252.
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Application introduction:.
VBsemi's NTD5865NLT4G&15-VB is a high-performance N—Channel field effect transistor with high rated current and low on-resistance. It is suitable for high-power and high-frequency applications and is widely used in various power systems and power modules. .
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**Main features:**.
1. High rated current, suitable for high power applications. .
2. Low on-resistance, providing high efficiency power control performance. .
3. Wide operating voltage range, suitable for a variety of power systems. .
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**Application fields and modules:**.
1. **Power switch module:** Used to build high-performance power switch modules, which can be applied to server power supply, industrial control power supply and other fields. .
2. **DC-DC converter:** In the DC converter, it provides high efficiency power conversion, suitable for electric vehicle chargers, power inverters and other scenarios. .
3. **Motor drive and control system:** Used for motor drive modules, suitable for industrial automation, power tools and other fields. .
4. **High power power inverter:** Suitable for high power inverter applications such as solar inverters and UPS power supplies. .
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**Precautions for use:**.
1. Please ensure that the device is connected correctly during design, and avoid reverse connection and overload to prevent damage to the device. .
2. Please use the voltage and current according to the maximum ratings provided in the data sheet to ensure stable and reliable performance. .
3. Pay attention to appropriate heat dissipation measures to maintain the appropriate temperature of the device during operation. .
4. Ensure that the device operates under the specified environmental conditions and avoid exceeding the temperature and voltage limits.