NTD5867NLT4G (VBE1638) parameter description: N-channel, 60V, 45A, on-resistance 24mΩ@10V, 28mΩ@4.5V, gate-source voltage range 20V (±V), threshold voltage 1.8V, package: TO252. . Application introduction: NTD5867NLT4G is suitable for high-power N-channel MOSFET, which is commonly found in power switches, motor control and inverter modules. . Its high current carrying capacity enables it to perform well in high-current demand scenarios. . Applicable fields and modules: Suitable for high-power applications such as power switches, motor control and inverter modules. . High current carrying capacity meets high current requirements. .
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