NTD5867NLT4G-VB, a N-channel TO252 MOSFET datasheet parameters video explanation

NTD5867NLT4G (VBE1638) parameter description: N-channel, 60V, 45A, on-resistance 24mΩ@10V, 28mΩ@4.5V, gate-source voltage range 20V (±V), threshold voltage 1.8V, package: TO252. .
Application introduction: NTD5867NLT4G is suitable for high-power N-channel MOSFET, which is commonly found in power switches, motor control and inverter modules. .
Its high current carrying capacity enables it to perform well in high-current demand scenarios. .
Applicable fields and modules: Suitable for high-power applications such as power switches, motor control and inverter modules. .
High current carrying capacity meets high current requirements. .