Detailed parameter description: .
- Model: NTD24N06LT4G-VB.
- Silk screen: VBE1638.
- Brand: VBsemi.
- Parameters: .
- Polarity: N channel.
- Rated voltage: 60V.
- Rated current: 45A.
- Leakage resistance: 24mΩ@10V, 28mΩ@4.5V.
- Gate-source voltage: 20Vgs(±V).
- Threshold voltage: 1.8Vth(V).
- Package: TO252.
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Application introduction: .
This model NTD24N06LT4G-VB is an N-channel MOSFET, suitable for use below 60V circuit applications. It features low leakage resistance and low threshold voltage, enabling high-current switching and enhancement functions at lower voltages. .
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This product is suitable for modules in the following fields: .
- Power module: Since this model has low leakage resistance and high current carrying capacity, it can be used in switching circuits in power modules to improve efficiency and stability. .
- Driver module: Due to its low gate-source voltage and low threshold voltage, it can be widely used in driver modules to control current and power output. .
- Power Tools: The reduced leakage resistance and high current characteristics of this model make it suitable for use in power tools to improve efficiency and stability. .
- Electric Vehicles: Due to the higher rated voltage and current, this model can be used in drive systems in electric vehicles to achieve high power output and energy efficiency. .
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In summary, NTD24N06LT4G-VB is suitable for modules in power modules, drive modules, power tools and electric vehicles. It has the characteristics of low leakage resistance, low threshold voltage and high current carrying capacity, and can provide high efficiency, stability and high power output in these field modules. .