Model: NTD20P06LT4G.
Silk screen: VBE2610N.
Brand: VBsemi.
Parameters: .
- Channel type: P channel.
- Rated voltage: -60V.
- Rated Current: -38A.
- RDS(ON): 61mΩ @ 10V, 72mΩ @ 4.5V.
- Gate-source voltage range: ±20V.
- Gate-source threshold voltage: -1.3V.
- Package type: TO252.
.
Application introduction: .
NTD20P06LT4G (silk screen: VBE2610N) is a P-channel power MOSFET produced by VBsemi Company. The following is a detailed parameter description and application introduction: .
.
Detailed parameter description: .
NTD20P06LT4G is a P-channel power MOSFET with high power and low on-resistance. The main parameters include rated voltage of -60V, rated current of -38A, RDS(ON) of 61mΩ @ 10V, 72mΩ @ 4.5V, gate-source voltage range of ±20V, gate-source threshold voltage of -1.3V, and package type TO252 . .
.
Application fields: .
NTD20P06LT4G (VBE2610N) is suitable for a variety of fields and application scenarios, mainly used in P-channel MOSFET circuits that require high power and low on-resistance. The following are some typical application areas: .
.
1. Power management module: NTD20P06LT4G can be used in power management modules to provide efficient power conversion and stable current output, improving the power consumption and efficiency of the system. .
2. Motor drive: It can be used in motor drive circuits to provide high-power and high-efficiency power output, and is suitable for motor drives in industrial automation and mechanical equipment. .
3. Automotive electronic systems: NTD20P06LT4G is suitable for power management, motor drive and lighting control in automotive electronic systems, meeting the requirements of automotive electronic systems for high power and high efficiency. .
.
In summary, NTD20P06LT4G (VBE2610N) is a P-channel power MOSFET, suitable for modules in the fields of power management modules, motor drives and automotive electronic systems. It has the characteristics of high power and low on-resistance, and is suitable for circuits requiring high power and high efficiency.