Model: NTD25P03LG-VB .
Silk screen: VBE2338 .
Brand: VBsemi .
Parameters: .
- P channel.
- -30V voltage.
- -26A current.
- RDS(ON): 33mΩ@10V, 46mΩ@4.5V.
- 20Vgs(±V) threshold voltage.
- -1.3Vth(V) threshold voltage.
- TO252 package.
.
Detailed parameter description of this model: .
- Type: N-channel P-MOSFET.
- Maximum drain-source voltage (VDS): -30V.
- Maximum drain-source Current (ID): -26A.
- On-resistance (RDS(ON)): 33mΩ (at 10V), 46mΩ (at 4.5V).
- Gate-source threshold voltage (Vgs(th) ): -1.3V.
- Maximum gate-source voltage (Vgs): ±20V.
- Package type: TO252.
.
This product is suitable for modules in the following fields: .
- Power management system.
- Automatic control system.
- Electric vehicle system.
- Industrial automation control system.
- LED lighting system, etc.
.
These channels P- MOSFET can be used in power switches, motor drives, power inverters, charge and discharge circuits and other applications. They provide reliable power switching functionality where high efficiency and low resistance are required. By varying the gate-source voltage control resistor, they enable efficient power management and circuit control. .