Model: ISL9N308AD3ST-VB.
Silk screen: VBE1307.
Brand: VBsemi.
Parameters:.
- Channel type: N-channel.
- Rated voltage: 30V.
- Maximum continuous current: 60A.
- Static on-resistance (RDS(ON)): 10mΩ @ 10V, 11mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage (Vth): 1.6V.
- Package: TO252.
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Detailed parameter description:.
ISL9N308AD3ST-VB is an N-channel metal oxide semiconductor field effect transistor (MOSFET) device with a rated voltage of 30V and a maximum continuous current of 60A. Its RDS(ON) performs well at different voltages, which are 10mΩ @ 10V and 11mΩ @ 4.5V. In addition, its threshold voltage (Vth) is 1.6V. .
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Application Introduction: .
ISL9N308AD3ST-VB is a high-performance N-channel MOSFET suitable for a variety of circuit applications, especially for high current and high voltage applications. It is commonly used in modules for power switches, motor control, power converters, power inverters, battery protection circuits and other fields that require high-performance MOSFETs. The TO252 package makes it suitable for a variety of applications such as industrial control, power amplifiers, power tools, electric vehicles and other high-power applications. This type of MOSFET has low on-resistance and high current handling capability, providing excellent performance and high efficiency, and is an ideal choice for applications that require high-power switching.