Model: ISL9N308AD3-VB.
Silk screen: VBE1307.
Brand: VBsemi.
Parameter description: .
- Polarity: N channel.
- Rated voltage: 30V.
- Maximum continuous drain current: 60A.
- Static drain-source resistance (RDS(ON)): 10mΩ @ 10V, 11mΩ @ 4.5V.
- Gate-source voltage (Vgs): 20V (±V).
- Turn-on voltage (gate threshold voltage): 1.6V.
- Package: TO252.
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Application introduction: .
ISL9N308AD3-VB is a N-channel field-effect transistor (MOSFET) device with high current handling capability and low drain-source resistance. This makes it suitable for a variety of high-performance electronic applications. .
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Application fields: .
1. **Power module**: Since ISL9N308AD3-VB has low drain-source resistance, it is suitable for switching power supply, battery protection and power management module, Helps improve power conversion efficiency. .
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2. **Motor Drive**: The high current handling capability of this MOSFET device makes it ideal for use in motor drives, motor control and motor protection, and can be used in a variety of motor applications. .
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3. **Battery Management**: In electric vehicles, power tools and portable equipment, ISL9N308AD3-VB can be used in battery management systems to ensure safe charging, discharging and protection of batteries. .
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4. **High-frequency switching circuit**: Due to its low resistance and high performance, this MOSFET is suitable for high-frequency switching circuits, such as DC-DC converters, power inverters, etc. .
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5. **LED Driver**: ISL9N308AD3-VB can be used for LED driver and lighting control to provide efficient LED lighting. .
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In short, ISL9N308AD3-VB is a versatile electronic device suitable for various electronic applications that require high current, low resistance, high efficiency and reliability. It can be used in power management, motor control, battery protection, high-frequency switching circuits, LED lighting and other modules.