Model: IRLZ34NPBF-VB.
Silk screen: VBM1638.
Brand: VBsemi.
Parameter description: .
- Polarity: N channel.
- Rated voltage: 60V.
- Maximum continuous drain current: 50A.
- Static drain-source resistance (RDS(ON)): 24mΩ @ 10V, 28mΩ @ 4.5V.
- Gate-source voltage (Vgs): 20V (±V).
- Turn-on voltage (gate threshold voltage): 1.8V.
- Package: TO220.
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Application introduction: .
IRLZ34NPBF-VB is a N-channel field-effect transistor (MOSFET) devices with high current handling capabilities and low drain-source resistance. These properties make them useful in a variety of high-performance electronic applications. .
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Application fields: .
1. **Power module**: IRLZ34NPBF-VB has low drain-source resistance, suitable for switching power supply and power management module, helping to increase power energy conversion efficiency. .
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2. **Motor Drive**: The high current handling capability of this MOSFET device makes it ideal for use in motor drives, motor control and motor protection, and can be used in a variety of motor applications. .
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3. **Battery Management**: In electric vehicles, power tools and portable equipment, IRLZ34NPBF-VB can be used in battery management systems to ensure safe charging, discharging and protection of batteries. .
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4. **High-frequency switching circuit**: Due to its low resistance and high performance, this MOSFET is suitable for high-frequency switching circuits, such as DC-DC converters, power inverters, etc. .
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5. **LED Driver**: IRLZ34NPBF-VB can be used for LED driver and lighting control to provide efficient LED lighting. .
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In short, IRLZ34NPBF-VB is a multifunctional electronic device suitable for various electronic applications that require high current, low resistance, high efficiency and reliability. It can be used in power management, motor control, battery protection, high-frequency switching circuits, LED lighting and other modules.