IPD640N06LG (VBE1638) parameter description: N channel, 60V, 45A, on-resistance 24mΩ@10V, 28mΩ@4.5V, gate-source voltage range 20V (±V), threshold voltage 1.8V, package: TO252. . Application introduction: IPD640N06LG is suitable for high-power N-channel MOSFETs, which are commonly used in modules in power switches, motor controls, inverters and other fields. . Its high current carrying capacity makes it perform well in high current demand scenarios. . Applicable fields and modules: Suitable for high-power applications, such as power switches, motor control and inverter modules. . High current carrying capacity meets large current needs. .
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