Model: IPD60R3K3C6-VB.
Silk screen: VBE165R04.
Brand: VBsemi.
Parameters:.
- N-channel.
- Maximum withstand voltage: 650V.
- Maximum current: 4A.
- Static on-resistance: 2200mΩ @ 10V, 2750mΩ @ 4.5V, 20Vgs (±V).
- Threshold voltage: 3.5V.
- Package: TO252.
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**Detailed parameter description:**.
IPD60R3K3C6-VB is an N-channel MOSFET with a maximum withstand voltage of 650V and a maximum current of 4A. Its static on-resistance is as follows at different voltages: 2200mΩ at 10V, 2750mΩ at 4.5V, and the driving voltage range is ±20V. The threshold voltage is 3.5V. The device adopts TO252 package, which has moderate size and heat dissipation performance. .
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**Application Introduction:**.
IPD60R3K3C6-VB is suitable for modules in various fields, including but not limited to: .
1. **Power switch module**: Due to its high withstand voltage and moderate current capability, it can be used in power switch and switch mode power supply modules, which helps to improve the efficiency of power conversion. .
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2. **Inverter and switching power supply**: In inverter and switching power supply, the device can achieve efficient power conversion and control, suitable for applications such as solar inverter, electric vehicle charger, etc. .
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3. **Motor drive**: It can be used for motor control and drive modules, such as motor control in electric vehicles, industrial machinery and household appliances. .
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4. **Battery charge and discharge protection**: In the battery management system, it can be used for battery charge and discharge protection and current control to ensure the safety and performance of the battery. .
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In short, the IPD60R3K3C6-VB is suitable for a variety of fields that require N-channel MOSFETs with high withstand voltage and moderate current capabilities, including power management, inverters, motor drives, and battery management. Its performance parameters make it an ideal choice for many electronic modules.