Model: IPD78CN10N G.
Silk screen: VBE1106N.
Brand: VBsemi.
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Detailed parameter description: .
- Polarity: N channel.
- Rated voltage: 100V .
- Rated current: 25A.
- Turn-on resistance (RDS(ON)): 55mΩ @ 10V, 57mΩ @ 4.5V, 73mΩ @ 2.5V.
- Rated gate-source voltage (Vgs ): 20V (±V).
- Threshold voltage (Vth): 1.4V.
- Package type: TO252.
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Application introduction: .
IPD78CN10N G is an N Channel MOSFET, with high voltage and high current capabilities, suitable for module applications in various fields. Features include low on-resistance, high switching speed and reliability. .
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Main application areas: .
1. Lighting module: IPD78CN10N G can be used for power management and drive control in LED lighting modules. Its high voltage and high current capabilities enable it to provide reliable power switching and precise lighting regulation. .
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2. Power conversion: Because IPD78CN10N G has low on-resistance and high switching speed, it can be applied to DC-DC converters and inverters in power conversion modules. It can provide efficient energy conversion and stable power output. .
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3. Electric vehicles: IPD78CN10N G is suitable for power management and drive control modules in electric vehicles. Its high voltage and low on-resistance provide efficient power transfer and stable electric vehicle operation. .
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4. Industrial automation: In the field of industrial automation, IPD78CN10N G can be used for motor control, sensor interface and data acquisition modules. Its high current capability and low on-resistance provide stable signal processing and precise control functions. .
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In summary, IPD78CN10N G is suitable for module applications in lighting modules, power conversion, electric vehicles and industrial automation. It has high voltage, high current capabilities and low on-resistance to meet a variety of application needs and provides efficient power switching and current control.