**IPD50N06S2-14-VB Detailed parameter description and application introduction: **. . - **Parameters: **. - Silk screen: VBE1615. - Brand: VBsemi. - Package: TO252. - Type: N—Channel. - Rated voltage: 60V. - Rated current: 60A. - RDS(ON): 9mΩ @ VGS=10V , 20V. - Threshold voltage: 1.87V. . - **Application introduction:**. - IPD50N06S2-14-VB is an N-channel field effect transistor (MOSFET), Suitable for high power switching and power control. . - In high-power switch modules, it is used to control the conduction and disconnection of circuits, and is suitable for high-power equipment. . - In the power control module, it is used to realize efficient switching and regulation of power supply, suitable for high-power electronic equipment. . . - **Precautions for use:**. - Silk screen VBE1615 corresponds to IPD50N06S2-14-VB to ensure correct identification. . - Use within the specified voltage and current range to prevent damage to the equipment. . - Follow the circuit design and application recommendations provided by the manufacturer.
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