Model: IPD50P04P4-13-VB.
Silk screen: VBE2412.
Brand: VBsemi.
Parameter description: .
- Polarity: P channel.
- Rated voltage: -40V.
- Maximum continuous drain current: -65A.
- Static drain-source resistance (RDS(ON)): 10mΩ @ 10V, 13mΩ @ 4.5V.
- Gate-source voltage (Vgs): 20V (±V).
- Turn-on voltage (gate threshold voltage): -1.6V.
- Package: TO252.
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Application introduction: .
IPD50P04P4 -13-VB is a P-channel field effect transistor (MOSFET) device with extremely high current handling capabilities and very low drain-source resistance, making it suitable for a variety of high-performance electronic applications. .
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Application fields: .
1. **Power module**: Since IPD50P04P4-13-VB has very low drain-source resistance, it is suitable for high-performance switching power supplies, The power management module and battery protection circuit can provide efficient power conversion. .
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2. **Motor Drive**: The high current handling capability of this MOSFET device makes it ideal for high-power motor drives, motor control and motor protection, and can be used in industrial motors and automotive motors and other fields. .
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3. **Battery Management**: In electric vehicles, power tools and energy storage systems, IPD50P04P4-13-VB can be used in battery management systems to ensure efficient charging, discharging and safety of batteries. .
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4. **Power Amplifier**: Due to its low resistance and high current capability, this MOSFET can be used in high-performance audio amplifiers and RF power amplifiers. .
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5. **High Power LED Driver**: IPD50P04P4-13-VB is suitable for high power LED lighting applications, providing efficient and reliable LED driver. .
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In short, IPD50P04P4-13-VB is a multifunctional, high-performance electronic device suitable for various electronic applications that require high current carrying capacity, low resistance, high efficiency and reliability. It can be used in power management, motor control, battery protection, power amplifier, high-power LED driver and other modules.