Model: IPD35N10S3L-26-VB.
Silk screen: VBE1104N.
Brand: VBsemi.
Parameters:.
- Channel type: N channel.
- Rated voltage: 100V.
- Maximum current: 40A.
- Static on-resistance (RDS(ON)): 30mΩ @ 10V.
- Static on-resistance (RDS(ON)): 31mΩ @ 4.5V.
- Gate-source voltage (Vgs): ±20V.
- Threshold voltage (Vth): 1.8V.
- Package: TO252.
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Application introduction:.
IPD35N10S3L-26- VB is an N-channel field effect transistor (FET) with high voltage tolerance and low on-resistance. It is suitable for a variety of electronic equipment and application fields, with the following main applications: .
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1. **Power switch:** IPD35N10S3L-26-VB can be used as a power switch for control circuits High current flows. Its high voltage tolerance and low on-resistance make it very effective in high power applications. .
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2. **Motor Drive:** In motor drivers, this high current FET can be used to control the start, stop and speed control of the motor, especially in applications requiring high voltage. .
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3. **Electronic Switch:** Suitable for various electronic switching applications such as power distribution units, switching power supplies, power management modules and circuit disconnects. .
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4. **Power Inverter:** In inverter application, it can be used to convert DC power to AC power, suitable for solar inverters, UPS systems, etc. .
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5. **Current Control:** Can be used in current control circuits such as current limiters and current sources. .
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These application areas cover a variety of high-power electronic devices and modules that require high voltage and high current handling capabilities. The features of the IPD35N10S3L-26-VB make it an important component for high-performance power management, motor control and current control.