**FDD5690-VB detailed parameter description and application introduction:**.
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- **Parameters:**.
- Silk screen: VBE1638.
- Brand: VBsemi.
- Package: TO252.
- Type: N—Channel.
- Rated voltage: 60V.
- Rated current: 45A.
- RDS(ON): 24mΩ @ VGS=10V, 20V.
- Threshold voltage: 1.8V.
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- **Application introduction:**.
- FDD5690-VB is an N-channel field effect transistor (MOSFET) suitable for medium and high power switching and power control. .
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- **Application areas:**.
- Medium and high power switch modules.
- Power control modules.
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- **Function:**.
- In medium and high power switch modules, it is used to control the conduction and disconnection of the circuit, and is suitable for medium and high power equipment. .
- In power control modules, it is used to realize the switching and regulation of the power supply, and is suitable for medium and high power electronic equipment. .
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- **Precautions for use:**.
- The silk screen VBE1638 corresponds to FDD5690-VB, ensure correct identification. .
- Use within the specified voltage and current range to prevent damage to the equipment. .
- Follow the circuit design and application recommendations provided by the manufacturer.