Model: FDD6637.
Silk screen: VBE2309.
Brand: VBsemi.
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Parameter description:.
- MOSFET type: P channel.
- Rated voltage (VDS): -30V .
- Rated current (ID): -60A .
- Turn-on resistance (RDS(ON)): 9mΩ@10V, 12mΩ@4.5V .
- Threshold voltage (Vth): -1.71 V .
- Package Type: TO252.
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Application Introduction:.
This FDD6637 MOSFET is a high power P-channel MOSFET suitable for applications requiring high power switching and control. It has a high current rating and moderate voltage rating capabilities, making it suitable for high-power switching and power conversion applications. .
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This MOSFET can be widely used in modules in the following fields: .
- Power management module: suitable for power conversion modules such as high-power switching power supplies, DC-DC converters, and inverters. .
- Motor control module: suitable for high-power DC motor drive, stepper motor drive and other motor control modules. .
- Automotive electronic modules: Suitable for high-power automotive electronic modules such as automotive battery management, lighting control, and electric vehicle control. .
- High-power LED lighting module: suitable for high-power LED lighting drive and control modules. .
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In short, FDD6637 MOSFET is suitable for various application scenarios that require high-power P-channel MOSFET, providing stable and reliable high current control and power conversion functions.