Model: FDD5614P. Silk screen: VBE2610N. Brand: VBsemi. . Detailed parameter description: . - Type: P-channel MOSFET. - Maximum withstand voltage: - 60V. - Maximum current: -38A. - On-resistance: 61mΩ @10V, 72mΩ @4.5V. - Gate-source voltage: 20Vgs (±V). - Gate threshold voltage : -1.3Vth. - Package: TO252. . Application Introduction: . FDD5614P is a P-channel MOSFET, suitable for negative voltage control or load switching applications. Its maximum withstand voltage is -60V, its maximum current is -38A, and it has low on-resistance and high performance. . . This device is suitable for module design in many fields, mainly including: . 1. Power management module: a circuit that can be used for negative power switch and positive and negative power control. . 2. Motor drive module: controller suitable for driving small DC motors or stepper motors. . 3. Converter module: can be used for output regulation of DC-DC converters and inverters. . . In short, FDD5614P is suitable for module design in negative voltage control and load switching applications, including power management, motor drive and converter modules.
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