Model: CSD17579Q3A-VB.
Silk screen: VBQF1310.
Brand: VBsemi.
Parameters: .
- N-channel MOSFET.
- Rated voltage: 30V.
- Maximum continuous Current: 40A.
- Static on-resistance (RDS(ON)): 11mΩ @ 10V, 16mΩ @ 4.5V.
- Gate-source voltage (Vgs): Maximum ±20V.
- Threshold voltage (Vth): 2.3V.
Package: DFN8 (3X3).
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Detailed parameter description: .
CSD17579Q3A-VB is an N-channel MOSFET, mainly designed for low voltage and high current applications. It is rated at 30V and can withstand up to 40A of continuous current. This MOSFET has excellent conduction characteristics at different voltages. Its static on-resistance is 11mΩ at 10V voltage and 16mΩ at 4.5V voltage, showing lower resistance, helping to reduce power consumption and heat. .
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In addition, CSD17579Q3A-VB has a wide range of gate-source voltage (Vgs), which can reach a maximum of ±20V, giving it flexibility in various control circuits. Its threshold voltage (Vth) is 2.3V, enabling precise control in different applications. .
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Application Introduction: .
CSD17579Q3A-VB is widely used in the following fields and modules: .
1. **Power Management Module**: This MOSFET performs well in low-voltage power management Excellent, can be used for voltage regulation, battery management, charge and discharge control, etc. .
2. **Motor drive**: Due to its high current bearing capacity, it is suitable for DC motor drive, such as electric vehicle motor control, drone motor control, etc. .
3. **DC-DC Converter**: The low on-resistance and high-efficiency performance of CSD17579Q3A-VB make it an ideal choice in DC-DC converters and can be used in power adapters and energy converters. .
4. **Power Switch**: Can be used for various types of power switches, such as power switch modules (PSU) and inverters. .
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In short, CSD17579Q3A-VB is a multi-functional N-channel MOSFET suitable for various low-voltage, high-current applications for power management, motor control and DC-DC converter modules. Provide solutions with high performance and reliability.