Model: CSD18502KCS-VB.
Silkscreen: VBM1402.
Brand: VBsemi.
Package: TO220.
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**Detailed parameter description:**.
- Architecture: N-Channel MOSFET.
- Voltage level: 40V.
- Current capability: 180A.
- RDS(ON): 2mΩ @ VGS=10V, VGS=20V.
- Threshold voltage (Vth): 3V.
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**Application introduction:**.
CSD18502KCS-VB is a high power N-Channel MOSFET in TO220 package, suitable for high current and high voltage applications. The following are the fields and modules that the device may be applied to:.
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1. **Power module:** Suitable for high power power modules such as power amplifiers and power inverters. .
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2. **Motor drive:** Can be used for high power motor drive, such as industrial motor and automotive motor. .
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3. **Power switch:** Can play a role in power switch modules that require high current and low on-resistance. .
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4. **Power amplifier:** Suitable for the output stage of high power amplifier to improve the efficiency of power amplifier. .
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**Precautions for use:**.
- When designing the circuit, make sure to understand and follow the maximum rated voltage and current of the device to prevent device damage. .
- Due to the high power characteristics, proper heat dissipation measures need to be considered to ensure that the device is within the normal operating temperature range. .
- In high power applications, carefully consider the PCB layout to ensure good heat dissipation and current conduction.