CSD17308Q3-VB, a 2个N-channel DFN8(3X3) MOSFET datasheet parameters video explana

Download PDF document

Download now

**VBsemi CSD17308Q3-VB Product Detailed Parameters:**.
.
- **Silkscreen Logo:** VBQF1310.
- **Brand:** VBsemi.
- **Package:** DFN8(3X3).
- **Channel Type:** 2 N-Channel channels.
- **Drain-Source Voltage (V_DS):** 30V.
- **Drain-Source Current (I_D):** 40A.
- **On-Resistance (R_DS(ON)):** 11mΩ @ V_GS=10V, V_GS=20V.
- **Threshold Voltage (V_th):** 2.3V.
.
**Application Introduction:**.
.
VBsemi CSD17308Q3-VB is a DFN8 (3X3) packaged N-Channel field effect transistor (MOSFET), mainly used in high power, low on-resistance power switch applications. .
.
**Main application areas and modules:**.
.
1. **Power module:** Suitable for DC-DC converters, power switch control, etc. .
.
2. **Motor drive module:** Can be used in motor drive modules to provide high current and low on-resistance characteristics. .
.
3. **Power switch module:** Plays a key role in high power power switch modules. .
.
**Function:**.
.
- Provides high current and low on-resistance power switch control. .
- Used to drive and control high power modules such as power supplies and motors. .
.
**Precautions for use:**.
.
1. **Voltage level:** Use within the specified voltage range and do not exceed the maximum drain-source voltage of the product. .
.
2. **Current load:** Be careful not to exceed the rated current of the product. .
.
3. **Operating temperature:** Use within the specified operating temperature range and avoid over-temperature operation. .
.
The above information is for reference only. Please read the product manual and specification carefully during actual use to ensure correct use and follow the manufacturer's recommendations and precautions.