**VBsemi CSD17308Q3-VB Product Detailed Parameters:**.
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- **Silkscreen Logo:** VBQF1310.
- **Brand:** VBsemi.
- **Package:** DFN8(3X3).
- **Channel Type:** 2 N-Channel channels.
- **Drain-Source Voltage (V_DS):** 30V.
- **Drain-Source Current (I_D):** 40A.
- **On-Resistance (R_DS(ON)):** 11mΩ @ V_GS=10V, V_GS=20V.
- **Threshold Voltage (V_th):** 2.3V.
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**Application Introduction:**.
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VBsemi CSD17308Q3-VB is a DFN8 (3X3) packaged N-Channel field effect transistor (MOSFET), mainly used in high power, low on-resistance power switch applications. .
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**Main application areas and modules:**.
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1. **Power module:** Suitable for DC-DC converters, power switch control, etc. .
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2. **Motor drive module:** Can be used in motor drive modules to provide high current and low on-resistance characteristics. .
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3. **Power switch module:** Plays a key role in high power power switch modules. .
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**Function:**.
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- Provides high current and low on-resistance power switch control. .
- Used to drive and control high power modules such as power supplies and motors. .
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**Precautions for use:**.
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1. **Voltage level:** Use within the specified voltage range and do not exceed the maximum drain-source voltage of the product. .
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2. **Current load:** Be careful not to exceed the rated current of the product. .
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3. **Operating temperature:** Use within the specified operating temperature range and avoid over-temperature operation. .
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The above information is for reference only. Please read the product manual and specification carefully during actual use to ensure correct use and follow the manufacturer's recommendations and precautions.