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BSS138LT1G-VB, a N-channel SOT23-3 MOSFET datasheet parameters video explanation
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Model: BSS138LT1G-VB.
Silk screen: VB162K.
Brand: VBsemi.
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Detailed parameter description:.
- Channel type: N channel.
- Rated voltage : 60V.
- Maximum current: 0.3A.
- Static on-resistance (RDS(ON)): 2800mΩ @ 10V, 3000mΩ @ 4.5V.
- Gate-source voltage (Vgs): ±20V .
- Threshold voltage (Vth): 1.6V.
- Package type: SOT23.
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Application introduction:.
BSS138LT1G-VB is an N-channel field effect transistor, widely used Used in modules and circuits in various electronic fields. The following are some of the main application areas of this product: .
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1. **Power Management Module**: BSS138LT1G-VB can be used in power switches and power management modules to help achieve efficient power control and management. .
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2. **Signal switch**: Due to its N-channel characteristics and low threshold voltage, this transistor is suitable for signal switching circuits and can be used in data transmission and signal processing modules. .
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3. **LED Lighting**: In the LED lighting control module, BSS138LT1G-VB can be used as a current regulator and switch, helping to achieve brightness control and color temperature adjustment. .
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4. **Battery Management**: Used in the battery management module to control battery charging and discharging, extend battery life and improve performance. .
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5. **Sensor Interface**: In the sensor module, this transistor can be used for signal amplification and sensor control, providing accurate measurement and response. .
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In short, BSS138LT1G-VB is suitable for a variety of electronic modules and circuits, including power management, signal processing, LED lighting, battery management, sensor interface and other fields. Its N-channel characteristics, low threshold voltage and high voltage rating make it a widely used component. .

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